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DSA00201876.pdf
Manufacturer
NEC
Partial File Text
High Power N-Channel Silicon MOSFET For Cellular Base Stations FEATURES NEM0995F01-30 3rd Order INTERMODULATION DISTORTION AND DRAIN CURRENT vs. OUTPUT POWER · HIGH LINEAR GAIN: 12 dB · H
Datasheet Type
Original
ECAD Model
Part Details
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LARGE SIGNAL IMPEDANCES
NEM0995F01-30
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