DSAZIHA100025811.pdf
- American Microsemiconductor
- MJE2011 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)400u @V
- Original
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