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DSAIHSC000104312.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs (L, S-Band) Features ⢠High power - P idB = 44.5 dBm at 1.8 GHz ⢠High gain - G-idB = 12 dB at 1.8 GHz ⢠Partially m
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