DSA00513964.pdf

Manufacturer Chino-Excel Technology
Partial File Text CEIF630 CEPF630/CEBF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 10A, RDS(ON) = 350m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and c
Datasheet Type Original
ECAD Model
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