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    DSASW00135397.pdf

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    • PROCESS CP315V Power Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 7.1 MILS Base Bonding Pa
    • Original

    DSASW00135397.pdf preview Download Datasheet

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    CP315V CXT3150 CZT3150

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