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DSASW00145998.pdf
Manufacturer
Cree
Partial File Text
ADVANCED INFORMATION CGH35240F 240 W, 2900-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree's CGH35240F is a gallium nitride (GaN) high electron mobility transistor
Datasheet Type
Original
ECAD Model
Part Details
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User Tagged Keywords
A114D
CGH3524
cgh35240
CGH35240-TB
CGH35240F
CGH35240F-TB
power transistor gan s-band
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