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    DSACRA00006184.pdf

    • Renesas Electronics
    • Preliminary Datasheet RJL6012DPE 600V - 10A - MOS FET High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.88 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C
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