DSAE007437.pdf

Manufacturer Infineon Technologies
Partial File Text IPB036N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max 3.6 m ID · Ideal for high frequ
Datasheet Type Original
ECAD Model
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DSAE007437.pdf preview Download Datasheet