DSA2IH00207199.pdf

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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET High Power GaAs FETs (L, S-Band) Features · High power - P idB = 44.5 dBm at 2.3 GHz · High gain - G idB = 11.5 dB at 2.3 GHz · Partially m atched type · H erm etic
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DSA2IH00207199.pdf preview Download Datasheet