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    DSAZIHA1000288741.pdf

    • Infineon Technologies
    • IPP086N10N3 G IPB083N10N3 G OptiMOS™3 Power-Transistor IPI086N10N3 G IPD082N10N3 G Product Summary Features V DS 8.2 mΩ ID • Excellent gate charge x R DS(on) product
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