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    DSA2IH00163210.pdf

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    • TIP145/146/147 PNP EPITAXIAL SILICON DARLINGTON TRANSÌSTOR HIGH DC CURRENT GAIN MIN hF E* 1000 @ V c e = *4V, IC * -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRI
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    147 B transistor tip 146 TIP145 tip146 tip147
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