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    DSAASSA0004588.pdf

    • Toshiba
    • TC58NYM9S3EBAI3 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512M BIT (64M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electr
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    P-TFBGA63-0813-0 TC58NYM9S3EBAI3
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