DSA00187216.pdf
- Chino-Excel Technology
- CEA3055L March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V , 3.7A , RDS(ON)=100m RDS(ON)=120m D @VGS=10V. @VGS=4.5V. High dense cell design for low RDS(ON). Ru
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