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DSA0041343.pdf
Manufacturer
Advanced Semiconductor
Partial File Text
3N209 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI 3N209 is an N-Channel Dual-Gate Depletion Type Transistor With Monolithic Gate Protection Diodes, Used in UHF Low Noise Amplifier Applicat
Type
Original
ECAD Model
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3N209
dual-gate