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DSAZIHA100083618.pdf
Manufacturer
Cree
Partial File Text
CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Creeâs CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Datasheet Type
Original
ECAD Model
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