BF1100WR datasheet

Manufacturer NXP Semiconductors
Description BF1100WR - Dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS
Datasheet Type Original
ECAD Model
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Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

934036570115 934036550215 BF1100R,215 BF1100TRL13 BF1100WR,115
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