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    DSAHI000132125.pdf

    • Toshiba
    • CVJ10F30 Schottky Barrier Diode Silicon Epitaxial CVJ10F30 1. Applications ยท High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.47 V (typ.) 3. Packaging and Internal Circ
    • Original
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