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Scans-00106260.pdf
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2SD SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR TENTATIVE O Jcn.1}x<1 â yt-v ? o Power Switching Applications ⢠High DC Current Gain hPE = 2000(Mln .) (Vce=3V, Ic=5A) ⢠Low Co
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ECAD Model
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