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    DSAZIHA100025416.pdf

    • American Microsemiconductor
    • BUR51 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)200 V(BR)CBO (V) I(C) Max. (A)60 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m° @V(
    • Original

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