DSA2IH0074431.pdf

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Partial File Text DIXYS IGBT with Diode IXSN 62N60U1 VCES v CE(sat) Short Circuit SOA Capability G é Symbol VCES Test Conditions Tj = 25° C to 150° C T, ,,c = 1 Mi2 J = 25° C to 150°C; R(a Continuous T ransient T c
Datasheet Type Scan
ECAD Model

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