Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSAEDA000123583.pdf

    • IXYS
    • High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Con
    • Original
    • Price & Stock Powered by Findchips

    DSAEDA000123583.pdf preview Download Datasheet

    Newly Added Datasheets | Privacy Policy | Digital Services Act | Contact Us | About Us

    Copyright © 2024.

    Supplyframe Tracking Pixel