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DSAE0013400.pdf
Manufacturer
Infineon Technologies
Partial File Text
IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 8.6 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal le
Datasheet Type
Original
ECAD Model
Part Details
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User Tagged Keywords
086N10
086n10n
DD-50
PG-TO220-FP
PG-TO220FP
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