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    DSA00501171.pdf

    • Toshiba
    • HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 0.35 0.35 : VCEO = 50 V, IC = 100 mA (ma
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