DSA2IH00177679.pdf

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Partial File Text SIEMENS SIPMOS® Power MOS Transistor BUZ 215 VDS Io ^ D S (o n ) = 500 v = 5.0 A = 1.5 Q · · · · · N channel FREDFET E nhancem ent mode A valanche-proof Package: TO -220 A B 1) T
Datasheet Type Scan
ECAD Model

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