DSA00102222.pdf
- Renesas Technology
- RJJ0601JPE Silicon P Channel MOS FET High Speed Power Switching REJ03G1603-0100 Rev.1.00 Nov 21, 2007 Features · Low on-resistance RDS(on) = 8.2 m typ. · Capable of 4.5 V gate drive · High
- Original
-
Price & Stock Powered by
Findchips
