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    DSAIHSC000104261.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET JS8838A-AS Power GaAs FETs (Chip Form) Features • High power - P1dB = 33.5 dBm at f = 8 GHz • High gain - G1dB = 5.5 dB at f = 8 GHz • Suitable for
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