DSAZIHA100024253.pdf
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American Microsemiconductor
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2N3585 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)300
V(BR)CBO (V)500
I(C) Max. (A)2.0
Absolute Max. Power Diss. (W)35
Maximum Operating Temp (øC)200õ
I(CBO) Max. (A)5.0m°
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Original
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