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DSA00760331.pdf
Manufacturer
Toshiba
Partial File Text
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-60SL TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level n HIGH POWER P1dB=48.0dB
Datasheet Type
Original
ECAD Model
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tim5964-60sl