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    DSASW00347349.pdf

    • Eudyna Devices
    • FLC157XP GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 31.5dBm (Typ.) High Gain: G1dB = 6.0dB(Typ.) High PAE: add = 29.5%(Typ.) Proven Reliability Drain DESCRIPTIO
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    1060 fet 682 FET C-Band Power GaAs FET HEMT Chips FLC157XP GaAs FET HEMT Chips
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