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DSAEDA000123372.pdf
Manufacturer
IXYS
Partial File Text
High-Gain IGBTs w/ Diode VCES = 600V IC110 = 46A VCE(sat) ⤠2.3V IXGQ50N60C4D1 IXGH50N60C4D1 High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum
Datasheet Type
Original
ECAD Model
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