DSADIGA00031128.pdf
-
OSRAM
-
2014-01-16
GaAlAs Light Emitting Diode (660 nm)
GaAlAs-Lumineszensdiode (660 nm)
Version 1.1
SFH 4860
Features:
Besondere Merkmale:
⢠Fabricated in a liquid phase epitaxy process
â¢
-
Original
-
-
Part pricing, stock, data attributes from Findchips.com