Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DASF0026911.pdf

    • NEC
    • DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES ยท Super low noise figure and high associated gain NF = 0.4 dB TYP.,
    • Original
    • Price & Stock Powered by Findchips

    DASF0026911.pdf preview Download Datasheet

    User Tagged Keywords

    HS350 marking v80 NE3509 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A nec v80 sdars lna transistor marking v80 ghz

    Newly Added Datasheets | Privacy Policy | Digital Services Act | Contact Us | About Us

    Copyright © 2024.

    Supplyframe Tracking Pixel