DSA2IH00207304.pdf

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Partial File Text TOSHIBA TOSHIBA DIODE 1SS271 V H F- U H F M IXER APPLICATION 1 SS271 : AVjr= 10mV (Max.) : ACT = 0.1pF(Max.) SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 S . 5 - 0 .3
Datasheet Type Scan
ECAD Model

DSA2IH00207304.pdf preview Download Datasheet