DSA2IH0074672.pdf

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Partial File Text DIXYS IGBT with Diode IXLN 35N120AU1 V CES v High Short Circuit SOA Capability ^C25 v CE(sat) = 1200 V = 40 A = 3.5 V Prelim inary data Symbol Test C onditions Tj = 25°C to 150°C Tj = 2
Datasheet Type Scan
ECAD Model

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