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DSA00152917.pdf
Manufacturer
Cree
Partial File Text
CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and
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ECAD Model
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A 12-15 GHz High Gain Amplifier
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