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    DSAIH00083937.pdf

    • Cree
    • CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, hi
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    DSAIH00083937.pdf preview Download Datasheet

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