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    DSAIHSC000104263.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET JS 8834-A S Power GaAs FETs (Chip Form) Features • Medium power - P1dB = 21 dBm at f = 8 GHz • High gain - GidB = ® at f = 8 GHz • Suitable for C-
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