Scans-0088034.pdf
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-  Silicon Transistor 2SC3616 NPNXt^ + i/Z;^ *J b =7>i> 9 NPN Silicon Epitaxial Transistor High Gain Amplifier W*/FEATURES hFE = 800~3200 @Vce = 2.0 V, Ic = 300 mA OfiVCE(sat)T'to VCE(sat)=0.
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