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    DSAIHSC000104308.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET TPM2626-30 High Power GaAs FETs (L, S-Band) Features • High power - P idB = 44.5 dBm at 2.6 GHz • High gain - G-idB = 11.5 dB at 2.6 GHz • Partially
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