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DSAZIHA100083584.pdf
Manufacturer
Cree
Partial File Text
CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Creeâs CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gai
Type
Original
ECAD Model
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