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    DSA00299935.pdf

    • Central Semiconductor
    • PROCESS CP315V Power Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 40 X 40 MILS Die Thickness 7.1 MILS Base Bonding Pad Ar
    • Original
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    DSA00299935.pdf preview Download Datasheet

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