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DSA00291125.pdf
Manufacturer
California Eastern Laboratories
Partial File Text
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES ยท Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB T
Datasheet Type
Original
ECAD Model
Part Details
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HS350
NE3509
NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
sdars lna
transistor marking v80 ghz
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