DSA00364281.pdf
- Hitachi Semiconductor
- 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 (Z) 1st. Edition Jun. 1997 Features · Low on-resistance R DS(on) = 0.08 typ (at VGS = 10 V, I D = 2.5 A) · 4V gate
- Original
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