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DSA00153685.pdf
Manufacturer
Cree
Partial File Text
CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree's CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
Datasheet Type
Original
ECAD Model
Part Details
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CGH35060
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