DSA00743517.pdf

Manufacturer Toshiba
Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · High power - P1dB = 24 dBm at f = 8 GHz · High gain - G1dB = 8 dB at f = 8 GHz · Suitable for C-Band amplifier · Ion implantati
Type Original
ECAD Model
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DSA00743517.pdf preview Download Datasheet