DSAZIHA100019215.pdf
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American Microsemiconductor
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2N6462 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)300
V(BR)CBO (V)300
I(C) Max. (A)100m
Absolute Max. Power Diss. (W)1.0
Maximum Operating Temp (øC)200þ
I(CBO) Max. (A)50n
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Original
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