DSAZIHA100017285.pdf
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American Microsemiconductor
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2MBI100L120 Transistors
Half Bridge IGBT Power Module
Isolated Case (Y/N)Yes
Circuits Per Package1
V(BR)CES (V)1.2k
V(BR)GES (V)
I(C) Max. (A)100
Absolute Max. Power Diss. (W)800â
Minimum Op
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Original
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