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Scans-00156800.pdf
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March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ⢠30V, 60A, Rds(on)=10iti Q @Vgs=10V. D Rds(on)=15itiQ @Vgs=4.5V. ⢠Super high dense cell design for extr
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ECAD Model
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CEB6031L
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