DSA2IH00110706.pdf

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Partial File Text MOTOROLA I SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS This TM O S Pow er FET is designed fo r
Type Scan
ECAD Model

DSA2IH00110706.pdf preview Download Datasheet