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Scans-00102203.pdf
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IRF230.231 P86PN2,M2 9.0 AMPERES 200,150 VOLTS RDS(ON) = 0.4 O This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance wi
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ECAD Model
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IRF230
IRF231